By Ki Young Kim
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Extra info for Advances in Optical and Photonic Devices
S. (2006). Group-III intermixing in InAs/InGaAlAs quantum dots-in-well. Appl. Phys. , Vol. 88, No. 111110, (March 2006) 111110 1-3 Wei, J. H. & Chan, K. S. (2005). A theoretical analysis of quantum dash structures. J. Appl. , Vol. 97, No. 123524, (June 2005) 123524 1-12 Xing, C. & Avrutin, E. A. (2005). Multimode spectra and active mode locking potential of quantum dot lasers. J. Appl. , Vol. 97, No. 104301, (April 2005) 104301 1-9 Zheltikov, A. M. (2003). Supercontinuum generation: Special issue.
14. Wavelength tuning map versus both mirror section injection currents. 52 Advances in Optical and Photonic Devices The threshold current is difficult to determine accurately as the device has three sections but when both mirror section injection currents are set for a particular mode a threshold current of 56 mA in the gain section is observed. When all three sections are biased together a threshold current of 146 mA is observed. Fig. 15. SMSR tuning map versus both mirror section injection currents.
Flattened top view of helix modes within a Rayleigh bandwidth Fig. 6. ]; bottom – carrier distribution dynamics shown for 10 picoseconds, where similar patterns emerge after a few psec. Y-axis indicates a 1 um wide central waveguide in the middle of 3 um boundary. For single mode lasers we have made non-conventional PQRs of hyperboloid drum shape like Figs. 9 μm, where as its top region of a few micron diameter serves as metallic contact area for electro pumping. Figs. , 2007) observed so far among the injection lasers of quantum well, wire, or dot type to the best of our, although the external quantum efficiency observed right after the threshold is poor suffering from the soft lasing turn-on behavior here.
Advances in Optical and Photonic Devices by Ki Young Kim